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low power low offset voltage single compar ator as331 data sheet 1 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited general description the as331 consists of a single precision voltage com- parator with a typical input offset voltage of 1.0mv and high voltage gain. it is specifically designed to operate from a single power supply over wide range of voltages. operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. the as331 is available in standard sot-23-5 package. features wide supply voltage range - single supply: 2v to 36v - dual supplies: 1 v to 18v low supply current at v cc =5v: 0.4ma low input bias curren t: 25na (typical) low input offset current:5na (typical) low input offset voltage: 1mv (typical) input common mode voltage range includes ground differential input voltage range equals to the power supply voltage low output saturation voltage at 4ma: 200mv (typical) open collector output applications battery charger cordless telephone switching power supply dc-dc module pc motherboard communication equipment figure 1. package type of as331 sot-23-5
low power low offset voltage single compar ator as331 data sheet 2 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 2. pin configurat ion of as331 (top view) pin configuration figure 3. functional block diagram of as331 functional block diagram vcc output input- input+ gnd k package (sot-23-5) input+ input- q5 q6 q1 q2 q3 q4 q7 q8 output vcc gnd 1 2 3 4 5 1 2 34 5
low power low offset voltage single compar ator as331 data sheet 3 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited package temperature range part number marking id packing type lead free green lead free green sot-23-5 -40 to 85 o c as331ktr-e1 as331ktr-g1 eea gea tape & reel circuit type package k: sot-23-5 e1: lead free as331 - tr: tape and reel ordering information parameter symbol value unit supply voltage v cc 40 v differential input voltage v id 40 v input voltage v in -0.3 to 40 v input current (v in <-0.3v) (note 2) i in 50 ma output short-circuit current to ground continuous power dissipation (t a =25 o c) p d 620 mw operating junction temperature t j 150 o c storage temperature t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c absolute maximum ratings (note 1) note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at th ese or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. note 2: this input current will only exist when the voltage at any of the input leads is driven negative. it is due to the collector-base junction of the inpu t pnp transistors becoming forward biased and thereby acting as input diode clamps. in addition to this diode action, there is also lateral npn parasitic transistor action on the ic chip. this transistor action can cause the output voltages of the comparators to go to the v+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. this is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3v (at 25 o c). g1: green bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green package.
low power low offset voltage single compar ator as331 data sheet 4 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited parameter symbol min max unit supply voltage v cc 236v operating ambient temperature range t a -40 85 o c recommended operating conditions electrical characteristics parameter symbol conditions min typ max unit input offset voltage v os v out =1.4v, v cc =5 to 30v 15 mv 7.0 input bias current i b i in + or i in - with output in linear range, v cm =0v 25 250 na 400 input offset current i io i in +-i in -, v cm =0v 550 na 200 input common mode voltage range (note 4) v cc =30v 0 v cc -1.5 v supply current i cc r l= v cc =5v 0.4 1.0 ma 2.0 v cc =30v 0.5 1.7 3.0 voltage gain g v v cc =15v, r l 15k ? , v out =1 to 11v 50 200 v/mv large signal response time v in =ttl logic swing, r l =5.1k ? 2 0 0 n s response time r l =5.1k ? 1.3 s output sink current i sink v in -=1v, v in +=0v, v out =1.5v 6.0 16 ma output leakage current i leak v in -=0v, v in +=1v, v out = 5v 0.1 na v in -=0v, v in +=1v, v out = 30v 1 a saturation voltage v sat v in -=1v, v in +=0v, i sink 4ma 200 400 mv 500 v cc =5v, gnd=0v, t a =25 o c, unless otherw ise specified. bold typeface applies over t a =-40 to 85 o c (note 3) note 3: these specificatio ns are limited to -40 o c t a 85 o c. limits over temperature are guaranteed by design, but not tested in production. note 4: the input common mode voltage of either input si gnal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c ). the upper end of the common mode voltage range is v cc -1.5v (at 25 o c ), but either or both inputs can go to +36v without damages, independent of the magnitude of the v cc .
low power low offset voltage single compar ator as331 data sheet 5 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance characteristics figure 4. supply current vs. supply voltage figure 5. supply current vs. case temperature figure 7. saturation voltage vs. case temperature figure 6. input offset vo ltage vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 supply current (ma) supply voltage (v) t c =-40 o c t c =25 o c t c =85 o c -40-20 0 20406080100120 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 supply current (ma) case temperature ( o c) v cc =5v v cc =30v -40-20 0 20406080100120 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 input offset voltage (mv) case temperature ( o c) r l =5.1k ? v cc =5v v cc =30v -40-20 0 20406080100120 100 150 200 250 300 350 saturation voltage (mv) case temperature ( o c) v cc =5v i sink =4ma
low power low offset voltage single compar ator as331 data sheet 6 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 8. saturation voltage vs. output sink current figure 9. response time vs. case temperature figure 10. response time vs. load capacitor typical performance ch aracteristics (continued) 0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 saturation voltage (v) output sink current (ma) v cc =5v t c =25 o c -40-20 0 20406080100120 200 250 300 350 400 450 500 550 600 response time (ns) case temperature ( o c) v cc =5v, input overdrive voltage=100mv low to high high to low 0 20406080100120140 300 400 500 600 700 800 900 response time (ns) load capacitor (pf) low to high high to low v cc =5v,gnd=0v, r l =5.1k ? input overdrive voltage=100mv 0 20406080100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 response time (ns) input overdrive voltage (mv) low to high high to low v cc =5v, gnd=0v r l =5.1k ? figure 11. response time vs. input overdrive voltage
low power low offset voltage single compar ator as331 data sheet 7 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 response time (ns) supply voltage (v) low to high high to low r l =5.1k ? input overdrive voltage=5mv 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 response time (ns) supply voltage (v) low to high high to low r l =5.1k ? input overdrive voltage=100mv figure 15. response time for negative transition figure 14. response time for positive transition figure 12. response time vs. supply voltage figure 13. response time vs. supply voltage input overdrive voltage=100mv 5mv 20mv 10mv input output v cc =5v, r l =5.1k ? input 100mv input overdrive voltage=5mv 20mv 10mv output v cc =5v, r l =5.1k ?
low power low offset voltage single compar ator as331 data sheet 8 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 17. response time for negative transition figure 16. response time for positive transition figure 19. 100khz response figure 18. 100khz response v cc =15v v cc =5v input output input overdrive voltage=100mv v cc =15v v cc =5v input output output input overdrive voltage=100mv input output v cc =5v, r l =5.1k ? input overdrive voltage=100mv input output input overdriv e voltage=5mv v cc =5v, r l =5.1k ?
low power low offset voltage single compar ator as331 data sheet 9 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) input output input overdrive voltage=100mv v cc =5v, r l =5.1k ? figure 20. 500khz response
low power low offset voltage single compar ator as331 data sheet 10 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical application figure 21. basic comparator figure 22. driving cmos v in + v ref + as331 v cc 3k ? v out + - 100k ? 5v + - as331 v in + v ref + v out figure 23. one shot multivibrator figure 24. squarewave oscillator 1m ? v cc v out 10k ? - + v in + 100pf 0.001 f as331 1m ? 1m ? 100k ? 75pf 100k ? v cc 4.3k ? v out 100k ? 100k ? - + v in as331
low power low offset voltage single compar ator as331 data sheet 11 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited mechanical dimensions unit: mm(inch) sot-23-5 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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